AM2321P v ds (v) i d (a) -3.4 -2.9 symbol limit units v ds -20 v gs 8 t a =25c -3.4 t a =70c -2.6 i dm -10 i s -1.9 a t a =25c 1.3 t a =70c 0.8 t j , t stg -55 to 150 c symbol maximum units 100 166 notes a. surface mounted on 1 x 1 fr4 board. b. pulse width limited by maximum junction temperature pulsed drain current b continuous source current (diode conduction) a thermal resistance ratings c/w parameter operating junction and storage temperature range absolute maximum ratings (t a = 25c unless otherwise noted) v parameter drain-source voltage maximum junction-to-ambient a continuous drain current a product summary -20 r ds(on) (m) 79 @ v gs = -4.5v 110 @ v gs = -2.5v gate-source voltage power dissipation a t <= 10 sec steady state r ja i d a p d w key features: ? low r ds(on) trench technology ? low thermal impedance ? fast switching speed typical applications: ? white led boost converters ? automotive systems ? industrial dc/dc conversion circuits product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
parameter symbol test conditions min typ max unit gate-source threshold voltage v gs(th) v ds = v gs , i d = -250 ua -0.4 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na v ds = -16 v, v gs = 0 v -1 v ds = -16 v, v gs = 0 v, t j = 55c -25 on-state drain current a i d(on) v ds = -5 v, v gs = -4.5 v -5 a v gs = -4.5 v, i d = -3.2 a 79 v gs = -2.5 v, i d = -2.6 a 110 forward transconductance a g fs v ds = -15 v, i d = -3.2 a 5 s diode forward voltage a v sd i s = -1 a, v gs = 0 v -0.8 v total gate charge q g 10 gate-source charge q gs 1.5 gate-drain charge q gd 3.1 turn-on delay time t d(on) 10 rise time t r 16 turn-off delay time t d(off) 42 fall time t f 21 input capacitance c iss 666 output capacitance c oss 87 reverse transfer capacitance c rss 80 notes a. pulse test: pw <= 300us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. dynamic b ns zero gate voltage drain current static ua electrical characteristics i dss m r ds(on) nc v ds = -10 v, r l = 3.2 , i d = -3.2 a, v gen = -4.5 v, r gen = 6 v ds = -10 v, v gs = -4.5 v, i d = -3.2 a drain-source on-resistance a pf v ds = -15 v, v gs = 0 v, f = 1 mhz AM2321P product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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